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dc.contributor.authorHuang, Jen-Hsienen_US
dc.contributor.authorTeng, Chin-Minen_US
dc.contributor.authorHsiao, Yu-Shengen_US
dc.contributor.authorYen, Feng-Wenen_US
dc.contributor.authorChen, Peilinen_US
dc.contributor.authorChang, Feng-Chihen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:12:09Z-
dc.date.available2014-12-08T15:12:09Z-
dc.date.issued2011-02-10en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp1090894en_US
dc.identifier.urihttp://hdl.handle.net/11536/9313-
dc.description.abstractUnderstanding the effects of conjugated polymer structures on exciton lifetimes and morphologies within bulk heterojunction (BHJ) films is a necessary step toward the development of better organic solar cells. Studying the impact of a polymer's structure on the optical, morphological, and performance characteristics of a device can lead to advances in the design of new polymers. In this study, we synthesized carbon- and silicon-bridged cyclopentadithiophene- (CPDT-) based polymers and determined their photophysical properties and morphologies by measuring the exciton lifetime distributions in their BHJ films The silicon-bridged CPDT-based polymer/[6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) BHJ exhibited a higher degree of luminescence quenching, suggesting that thermodynamically favorable mixing on the molecular scale and nanoscale phase separation occurred simultaneously in the blend film. We attribute this favorable morphology to the presence of strong pi-pi stacking in the silicon-bridged CPDT-based polymers. Under AM 1.5 G illumination (100 mA cm(-2)), a device incorporating the silicon-bridged CPDT-based polymer and PCBM (1:2, w/w) gave an overall power conversion efficiency of 3.5% with a short-circuit current of 9.0 mA cm(-2), an open-circuit voltage of 0.72 V, and a fill factor of 53.6%.en_US
dc.language.isoen_USen_US
dc.titleNanoscale Correlation between Exciton Dissociation and Carrier Transport in Silole-Containing Cyclopentadithiophene-Based Bulk Heterojunction Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp1090894en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue5en_US
dc.citation.spage2398en_US
dc.citation.epage2405en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000286868600127-
dc.citation.woscount14-
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