Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Fang-Chung | en_US |
dc.contributor.author | Wu, Jyh-Lih | en_US |
dc.contributor.author | Yang, Sidney S. | en_US |
dc.contributor.author | Hsieh, Kuo-Huang | en_US |
dc.contributor.author | Chen, Wen-Chang | en_US |
dc.date.accessioned | 2014-12-08T15:12:10Z | - |
dc.date.available | 2014-12-08T15:12:10Z | - |
dc.date.issued | 2008-05-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2937202 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9329 | - |
dc.description.abstract | The device characteristics of polymer solar cells with cesium carbonate (Cs(2)CO(3)) as an electron-injection interlayer have been investigated. It is found that the insertion of Cs(2)CO(3) at the cathode interface improves the device power conversion efficiency from 2.3% to 3.1%. In order to further understand the mechanism, the interfacial interaction between the active organic layer and the cathode was studied by x-ray photoemission spectroscopy (XPS). The results of XPS measurement indicate the fact that a portion of electrons transfer from the interlayer into the organic layer, resulting in n-type doping. The n-doping effect enhances the efficiency of electron injection and collection. Further, the maximum open-circuit voltage (V(oc)) was determined from its temperature dependence. For the device with Cs(2)CO(3), the maximum V(oc) is extremely close to the corresponding value of the energy difference between the highest occupied molecular orbital of the electron donor and the lowest unoccupied molecular orbital of the electron acceptor, suggesting a better Ohmic contact. All evidences indicated that Cs(2)CO(3) is a promising candidate as an interlayer to improve the device performance. (C) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Cesium carbonate as a functional interlayer for polymer photovoltaic devices | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2937202 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 103 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000256303800081 | - |
dc.citation.woscount | 44 | - |
Appears in Collections: | Articles |
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