一種新式氮化矽快閃式記憶元件研究(I)

完整后设资料纪录

DC 栏位	值	语言
dc.contributor.author	汪大晖	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:35:26Z	-
dc.date.available	2014-12-13T10:35:26Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-066	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93431	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665696&docId=126372	en_US
dc.description.sponsorship	行政院国家科学委员会	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化矽	zh_TW
dc.subject	快闪记忆体	zh_TW
dc.subject	物理特性	zh_TW
dc.subject	电子可抹拭唯读记忆体	zh_TW
dc.subject	Silicon nitride	en_US
dc.subject	Flash memory	en_US
dc.subject	Physical characterization	en_US
dc.subject	EEPROM	en_US
dc.title	一种新式氮化矽快闪式记忆元件研究(I)	zh_TW
dc.title	Physics, Characterization and Design of Oxide-Nitride-Oxide Flash EEPROM Devices (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	国立交通大学电子工程学系	zh_TW
显示于类别：	Research Plans

APA	汪., & WANG T. (2001). 一种新式氮化矽快闪式记忆元件研究(I). https://www.grb.gov.tw/search/planDetail?id=665696&docId=126372.
Bibtex	@article{2001, title={一种新式氮化矽快闪式记忆元件研究(I)}, author={汪大晖 and WANG TAHUI}, journal={https://www.grb.gov.tw/search/planDetail?id=665696&docId=126372}, year={2001}, url={https://ir.lib.nycu.edu.tw/handle/11536/93431?mode=full}, }