砷沈積在低溫砷化鎵中的電性物理研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	陳振芳	en_US
dc.contributor.author	CHEN JENN-FANG	en_US
dc.date.accessioned	2014-12-13T10:36:06Z	-
dc.date.available	2014-12-13T10:36:06Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2112-M009-024	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93786	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=523665&docId=95106	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	低溫砷化鎵	zh_TW
dc.subject	砷沈積	zh_TW
dc.subject	分子束磊晶	zh_TW
dc.subject	Low-temperature GeAs	en_US
dc.subject	As precipitates	en_US
dc.subject	Molecular beam epitaxy	en_US
dc.title	砷沈積在低溫砷化鎵中的電性物理研究	zh_TW
dc.title	What Roles as Precipitates Play in the Electrical Properties of Low Temperature GaAs	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
顯示於類別：	研究計畫