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dc.contributor.authorLee, W. C.en_US
dc.contributor.authorLee, Y. J.en_US
dc.contributor.authorTung, L. T.en_US
dc.contributor.authorWu, S. Y.en_US
dc.contributor.authorLee, C. H.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorNg, H. M.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorHsu, C. H.en_US
dc.date.accessioned2014-12-08T15:12:14Z-
dc.date.available2014-12-08T15:12:14Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2905241en_US
dc.identifier.urihttp://hdl.handle.net/11536/9399-
dc.description.abstractThe authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in. Si (111) substrates with a nanothick (similar to 4.8 nm thick) gamma-Al(2)O(3) as a template/buffer. A thin layer of MBE-AlN similar to 40 nm thick was inserted prior to the growth of GaN. High-resolution transmission electron microscopy (HR-TEM) and high-resolution x-ray diffraction studies indicated that both of the nanothick gamma-Al(2)O(3) and AlN are a single crystal. Reflection high-energy electron diffraction, high-resolution x-ray scattering using synchrotron radiation, and cross-sectional HR-TEM measurements indicated an orientation relationship of GaN(0002)parallel to AlN(0002)parallel to gamma-Al(2)O(3)(111)parallel to Si(111) and GaN[10-10]parallel to AlN[10-10]parallel to gamma-Al(2)O(3)[2-1-1]parallel to Si[2-1-1]. A dislocation density of 5x(10(8)-10(9))/cm(2) in the GaN similar to 0.5 mu m thick was determined using cross-sectional TEM images under weak-beam dark-field conditions. (C) 2008 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleGrowth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111)en_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.2905241en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume26en_US
dc.citation.issue3en_US
dc.citation.spage1064en_US
dc.citation.epage1067en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256304600031-
dc.citation.woscount6-
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