Critical voltage reduction by alignment layer modification in Pi-cells

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Wei-Ching	en_US
dc.contributor.author	Chen, Yi-Fan	en_US
dc.contributor.author	Chen, Szu-Fen	en_US
dc.contributor.author	Chen, Huang-Ming Philip	en_US
dc.date.accessioned	2014-12-08T15:12:14Z	-
dc.date.available	2014-12-08T15:12:14Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9401	-
dc.description.abstract	A new approach which can effectively lower the critical voltage (Vcr) of pi cell has been realized in this study. New structure of pi r cell can increase the control range of driving voltage, which makes the gray scale manipulation near Vcr more stable without loosing the fast response property.	en_US
dc.language.iso	en_US	en_US
dc.title	Critical voltage reduction by alignment layer modification in Pi-cells	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	692	en_US
dc.citation.epage	694	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000258177700186	-
顯示於類別：	會議論文