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dc.contributor.author張俊彥en_US
dc.contributor.authorCHANG CHUN-YENen_US
dc.date.accessioned2014-12-13T10:36:37Z-
dc.date.available2014-12-13T10:36:37Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-048zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94061-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=428968&docId=76775en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject超高真空化學氣相沈積法zh_TW
dc.subject複晶矽zh_TW
dc.subject薄膜電晶體zh_TW
dc.subject可靠度zh_TW
dc.subject低溫zh_TW
dc.subject鈍化zh_TW
dc.subject退火zh_TW
dc.subject液晶顯示器zh_TW
dc.subjectUHVCVDen_US
dc.subjectPolysiliconen_US
dc.subjectThin film transistor (TFT)en_US
dc.subjectReliabilityen_US
dc.subjectLow temperatureen_US
dc.subjectPassivationen_US
dc.subjectAnnealingen_US
dc.subjectLCDen_US
dc.title超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---子計畫III:超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究zh_TW
dc.titleStudy of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structureen_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
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