完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | CHANG CHUN-YEN | en_US |
| dc.date.accessioned | 2014-12-13T10:36:37Z | - |
| dc.date.available | 2014-12-13T10:36:37Z | - |
| dc.date.issued | 1999 | en_US |
| dc.identifier.govdoc | NSC88-2215-E009-048 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/94061 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=428968&docId=76775 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 超高真空化學氣相沈積法 | zh_TW |
| dc.subject | 複晶矽 | zh_TW |
| dc.subject | 薄膜電晶體 | zh_TW |
| dc.subject | 可靠度 | zh_TW |
| dc.subject | 低溫 | zh_TW |
| dc.subject | 鈍化 | zh_TW |
| dc.subject | 退火 | zh_TW |
| dc.subject | 液晶顯示器 | zh_TW |
| dc.subject | UHVCVD | en_US |
| dc.subject | Polysilicon | en_US |
| dc.subject | Thin film transistor (TFT) | en_US |
| dc.subject | Reliability | en_US |
| dc.subject | Low temperature | en_US |
| dc.subject | Passivation | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | LCD | en_US |
| dc.title | 超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---子計畫III：超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究 | zh_TW |
| dc.title | Study of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| 顯示於類別： | 研究計畫 | |
