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dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorLee, Yea-Chenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:12:15Z-
dc.date.available2014-12-08T15:12:15Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2008.921129en_US
dc.identifier.urihttp://hdl.handle.net/11536/9408-
dc.description.abstractIn this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened mesh-surface are proposed and demonstrated by a combination of pattern sapphire substrate, wafer bonding, laser lift-off, and chemical wet etching processes. With the help of adopting a roughened mesh-surface, the light-output power (at 350 mA) of the NUV-VLEDs could be further enhanced about 20% as compared with that of the conventional NUV-VLED.en_US
dc.language.isoen_USen_US
dc.subjectlaser lift-off (LLO)en_US
dc.subjectroughened mesh-surfaceen_US
dc.subjectvertical-injection light-emitting diodes (VLEDs)en_US
dc.subjectwafer bondingen_US
dc.titleFurther enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2008.921129en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue9-12en_US
dc.citation.spage803en_US
dc.citation.epage805en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256966100046-
dc.citation.woscount14-
Appears in Collections:Articles


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