Further enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surface

doi:10.1109/LPT.2008.921129

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Chia-En	en_US
dc.contributor.author	Lee, Yea-Chen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:12:15Z	-
dc.date.available	2014-12-08T15:12:15Z	-
dc.date.issued	2008-05-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2008.921129	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9408	-
dc.description.abstract	In this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened mesh-surface are proposed and demonstrated by a combination of pattern sapphire substrate, wafer bonding, laser lift-off, and chemical wet etching processes. With the help of adopting a roughened mesh-surface, the light-output power (at 350 mA) of the NUV-VLEDs could be further enhanced about 20% as compared with that of the conventional NUV-VLED.	en_US
dc.language.iso	en_US	en_US
dc.subject	laser lift-off (LLO)	en_US
dc.subject	roughened mesh-surface	en_US
dc.subject	vertical-injection light-emitting diodes (VLEDs)	en_US
dc.subject	wafer bonding	en_US
dc.title	Further enhancement of nitride-based near-ultraviolet vertical-injection light-emitting diodes by adopting a roughened mesh-surface	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2008.921129	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	9-12	en_US
dc.citation.spage	803	en_US
dc.citation.epage	805	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000256966100046	-
dc.citation.woscount	14	-
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