标题: | The post-annealing effect on the electrical properties of pentacene thin film transistors |
作者: | Shih, Yin-Ting Chen, Fang-Chung 光电工程学系 Department of Photonics |
公开日期: | 2007 |
摘要: | In this study, the effect of post-annealing on the device performance is investigated systematically. X-ray diffraction pattern and images of atomic force microscopy reveal that the pentacene grain grows larger and the grain boundaries reduces after thermal annealing, resulting in the enhancement of device performance and stability. |
URI: | http://hdl.handle.net/11536/9412 |
ISBN: | 978-957-28522-4-8 |
期刊: | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 |
起始页: | 709 |
结束页: | 712 |
显示于类别: | Conferences Paper |