标题: The post-annealing effect on the electrical properties of pentacene thin film transistors
作者: Shih, Yin-Ting
Chen, Fang-Chung
光电工程学系
Department of Photonics
公开日期: 2007
摘要: In this study, the effect of post-annealing on the device performance is investigated systematically. X-ray diffraction pattern and images of atomic force microscopy reveal that the pentacene grain grows larger and the grain boundaries reduces after thermal annealing, resulting in the enhancement of device performance and stability.
URI: http://hdl.handle.net/11536/9412
ISBN: 978-957-28522-4-8
期刊: IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007
起始页: 709
结束页: 712
显示于类别:Conferences Paper