Title: The post-annealing effect on the electrical properties of pentacene thin film transistors
Authors: Shih, Yin-Ting
Chen, Fang-Chung
光電工程學系
Department of Photonics
Issue Date: 2007
Abstract: In this study, the effect of post-annealing on the device performance is investigated systematically. X-ray diffraction pattern and images of atomic force microscopy reveal that the pentacene grain grows larger and the grain boundaries reduces after thermal annealing, resulting in the enhancement of device performance and stability.
URI: http://hdl.handle.net/11536/9412
ISBN: 978-957-28522-4-8
Journal: IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007
Begin Page: 709
End Page: 712
Appears in Collections:Conferences Paper