8吋晶圓半導體LPCVD製程設備之研發---子計劃IV：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(III)

Date

Authors

TSEUNG-YUENTSENG

Keywords

氧化鉭, 低壓化學氣相沈積法, 薄膜生長, 晶圓, Tantalum oxide, Low pressure chemical vaporization deposition (LPCVD), Thin film growth, Wafer

URI

https://www.grb.gov.tw/search/planDetail?id=418203&docId=74189
https://ir.lib.nycu.edu.tw/handle/11536/94323

Collections

研究計畫;;Research Plans