薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析

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882215E009041.pdf (710.99 KB)

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熱載子, 可靠度, 氧化層, 金氧半場效電晶體, 深次微米, 洩漏電流, Hot carrier, Reliability, Oxided larger, MOSFET, Deep submicrometer, Leakage current

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https://www.grb.gov.tw/search/planDetail?id=418054&docId=74156
https://ir.lib.nycu.edu.tw/handle/11536/94333

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