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dc.contributor.authorChen, Ying-Pinen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.date.accessioned2014-12-08T15:12:16Z-
dc.date.available2014-12-08T15:12:16Z-
dc.date.issued2007en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/9434-
dc.description.abstractBy varying the substrate temperature during the deposition of pentacene, the effect of temperature on the electrical performance of organic thin-film transistors, without serious disturbance of phase transition of pentacene, has been investigated. It has already understood that the device mobility goes up with temperature. The transfer line method is applied to find out the origin behind in the study. First, the channel resistance is more sensitive to the deposition temperature due to the difference size of grain. Second, among the two parts of parasitic resistance, the bulk resistance plays a more important role, and is less fluctuant to the deposition temperature. Furthermore, the contact resistance reduces with increasing deposition temperature, which is probably attributed from the difference of the molecular orientation.en_US
dc.language.isoen_USen_US
dc.titleEffect of deposition temperature on the channel and contact resistance of pentacene thin-film transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.citation.spage732en_US
dc.citation.epage735en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000258177700197-
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