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標題: 製作低溫450℃複晶矽薄膜電晶體之關鍵技術---主動層(Active Layer)及源/汲接面(Junction)之研製
Key Technologies of Low-Temperature(<450.degree.C) Poly-Si Thin Film Transistors---Research and Fabrication of Active Layers and Source/Drain Junctions
作者: 鄭晃忠
CHENG HUANG-CHUNG
交通大學電子工程研究所
關鍵字: 複晶矽薄膜電晶體;主動層;低溫;準分子雷射;摻雜;退火;Polysilicon TFT;Active layer;Low-temperature;Excimer laser;Doping;Annealing
公開日期: 1999
官方說明文件#: NSC88-2215-E009-057
URI: http://hdl.handle.net/11536/94386
https://www.grb.gov.tw/search/planDetail?id=428954&docId=76772
Appears in Collections:Research Plans


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