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dc.contributor.author李明知en_US
dc.contributor.authorLEE MING-CHIHen_US
dc.date.accessioned2014-12-13T10:37:06Z-
dc.date.available2014-12-13T10:37:06Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2112-M009-021zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94391-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=426394&docId=76148en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject光學性質zh_TW
dc.subject雜質zh_TW
dc.subject時域解析冷激光zh_TW
dc.subjectGaNen_US
dc.subjectOptical propertyen_US
dc.subjectImpurityen_US
dc.subjectTime-resolved photoluminescenceen_US
dc.title三五族氮化合物半導體薄膜之物理特性研究---子計畫I:GaN類半導體材料及物理結構光性之研究(III)zh_TW
dc.titleOptical Property Studies of GaN-based Semiconductor Materials and Structures (III)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子物理系zh_TW
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