三五族氮化合物半導體薄膜之物理特性研究---子計畫I：GaN類半導體材料及物理結構光性之研究(III)

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DC Field	Value	Language
dc.contributor.author	李明知	en_US
dc.contributor.author	LEE MING-CHIH	en_US
dc.date.accessioned	2014-12-13T10:37:06Z	-
dc.date.available	2014-12-13T10:37:06Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2112-M009-021	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94391	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=426394&docId=76148	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	光學性質	zh_TW
dc.subject	雜質	zh_TW
dc.subject	時域解析冷激光	zh_TW
dc.subject	GaN	en_US
dc.subject	Optical property	en_US
dc.subject	Impurity	en_US
dc.subject	Time-resolved photoluminescence	en_US
dc.title	三五族氮化合物半導體薄膜之物理特性研究---子計畫I：GaN類半導體材料及物理結構光性之研究(III)	zh_TW
dc.title	Optical Property Studies of GaN-based Semiconductor Materials and Structures (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans

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