Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 林登松 | en_US |
| dc.contributor.author | DENG-SUNGLIN | en_US |
| dc.date.accessioned | 2014-12-13T10:37:08Z | - |
| dc.date.available | 2014-12-13T10:37:08Z | - |
| dc.date.issued | 1999 | en_US |
| dc.identifier.govdoc | NSC88-2112-M009-005 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/94413 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=426144&docId=76091 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 半導體 | zh_TW |
| dc.subject | 雜質 | zh_TW |
| dc.subject | 化學氣相沈積 | zh_TW |
| dc.subject | 表面物理 | zh_TW |
| dc.subject | Semiconductor | en_US |
| dc.subject | Impurity | en_US |
| dc.subject | Chemical vapor deposition (CVD) | en_US |
| dc.subject | Surface physics | en_US |
| dc.title | 第三、五族雜質在矽、鍺晶面上氣相生長之原子與電子結構研究 | zh_TW |
| dc.title | Atomic Level Investigation of Boron and Phosphorus Chemical Vapor Deposition on Si, Ge Surfaces | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學物理研究所 | zh_TW |
| Appears in Collections: | Research Plans | |
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