II-VI族稀磁性半導體之研究與凝體物理理論探討

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	褚德三	en_US
dc.contributor.author	CHUU DER SAN	en_US
dc.date.accessioned	2014-12-13T10:37:08Z	-
dc.date.available	2014-12-13T10:37:08Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2112-M009-004	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94414	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=426140&docId=76090	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	稀磁性半導體薄膜	zh_TW
dc.subject	凝體物理	zh_TW
dc.subject	高壓相變	zh_TW
dc.subject	Diluted magnetic semiconductor thin film	en_US
dc.subject	Condensed matter physics	en_US
dc.subject	High pressure induced phase transition	en_US
dc.title	II-VI族稀磁性半導體之研究與凝體物理理論探討	zh_TW
dc.title	Investigation of Diluted Magnetic II-VI Semiconductors and Theoretical Studies of Condensed Matter Physics	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
顯示於類別：	研究計畫