非有序材料的穿隧電子能階密度研究

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DC Field	Value	Language
dc.contributor.author	許世英	en_US
dc.contributor.author	SHIH-YINGHSU	en_US
dc.date.accessioned	2014-12-13T10:37:08Z	-
dc.date.available	2014-12-13T10:37:08Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2112-M009-041	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94416	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=426127&docId=76087	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	非有序銅鍺合金	zh_TW
dc.subject	穿隧電子能階密度	zh_TW
dc.subject	電子-電子庫侖作用力	zh_TW
dc.subject	金屬-非金屬相變	zh_TW
dc.subject	Disordered CuGe alloy	en_US
dc.subject	Tunneling density of state	en_US
dc.subject	Electron-electron interaction	en_US
dc.subject	Metal-insulator transition	en_US
dc.title	非有序材料的穿隧電子能階密度研究	zh_TW
dc.title	Studies of the Tunneling Density of States in the Disordered Materials	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans

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