非有序材料的穿隧電子能階密度研究

標題:	非有序材料的穿隧電子能階密度研究 Studies of the Tunneling Density of States in the Disordered Materials
作者:	許世英 SHIH-YINGHSU 交通大學電子物理系
關鍵字:	非有序銅鍺合金;穿隧電子能階密度;電子-電子庫侖作用力;金屬-非金屬相變;Disordered CuGe alloy;Tunneling density of state;Electron-electron interaction;Metal-insulator transition
公開日期:	1999
官方說明文件#:	NSC88-2112-M009-041
URI:	http://hdl.handle.net/11536/94416 https://www.grb.gov.tw/search/planDetail?id=426127&docId=76087
Appears in Collections:	Research Plans

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