化學氣相沈積氧化鉭在Noble金屬電極之動態隨機存取記憶體電容器之研究

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882215E009035.pdf (324.24 KB)

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1999

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氧化鉭, 動態隨機存取記憶體, 化學氣相沈積法, 記憶體元件, 電容器, Tantalum oxide, DRAM, CVD, Memory device, Capacitor

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https://www.grb.gov.tw/search/planDetail?id=444202&docId=80442
 https://ir.lib.nycu.edu.tw/handle/11536/94447

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研究計畫;;Research Plans

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