隨機記憶體用高介電薄膜電容之研發(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	林鵬	en_US
dc.contributor.author	LIN PANG	en_US
dc.date.accessioned	2014-12-13T10:37:12Z	-
dc.date.available	2014-12-13T10:37:12Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-028	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94453	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444166&docId=80433	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	隨機動態存取記憶體	zh_TW
dc.subject	高介電常數	zh_TW
dc.subject	薄膜	zh_TW
dc.subject	電容器	zh_TW
dc.subject	濺鍍	zh_TW
dc.subject	DRAM	en_US
dc.subject	High dielectric constant	en_US
dc.subject	Thin film	en_US
dc.subject	Capacitor	en_US
dc.subject	Sputtering	en_US
dc.title	隨機記憶體用高介電薄膜電容之研發(III)	zh_TW
dc.title	High Dielectric Thin Film Capacitor for DRAM (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程研究所	zh_TW
Appears in Collections:	Research Plans

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