鈦酸鍶鋇薄膜之特性與可靠度研究

Abstract

隨著次微米元件從超大型積體電路到極大型積體電路尺寸之縮小，電容面積也隨之縮小，但儲存的電荷仍需維持在一臨界值(~25fF/cell)。高介電係數材料作為動態隨機體中電容器益形重要。而鈦酸鍶鋇提供低漏電流、高介電常數、長使用壽命等等適合作記憶體材料的特性。其應用範圍大概在十億位元至四十億位元DRAM. 本論文將針對不同O2和Ar氣氛混合比例濺渡下所長成之鈦酸鍶鋇層，主要是探討鈦酸鍶鋇薄膜的電性特性與可靠度研究，藉由電性的量測來探討漏電流機制，與薄膜強度。

As device dimensions are scaled down into the deep-submicron regime, the demand for small capacitor area while still maintaining a certain critical charge for DRAM capacitors become more stringent. However, higher dielectric constant materials are required for 1 G bit DRAMs and beyond. Recently the BST (BaxSr1-xTiO3) film has attracted great attentions due to its high dielectric constant, low leakage current, TDDB over 10 years. In this study, we present the electrical properties of BST thin films with various OMR. And the studies of reliability were investigated here. In addition, we discuss the conduction mechanism and the breakdown strength from the I-V measurement.