Nanostructure structure effect on transition in pi-cells

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Chia-Tien	en_US
dc.contributor.author	Chen, Szu-Fen	en_US
dc.contributor.author	Chen, Huang-Fling Philip	en_US
dc.date.accessioned	2014-12-08T15:12:18Z	-
dc.date.available	2014-12-08T15:12:18Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9457	-
dc.description.abstract	It is well known that the operating state (bend state) of a pi-cell must be nucleated then uniformly spread the bend orientation in splay state before operation. In this study, the random distribution of silicon oxide nano-particles was investigated for decreasing the time of splay-to-bend transition in pi-cells. Under the optimum conditions, the 50% reduction of splay-to-bend transition time was found in nanostructure structure treated surfaces.	en_US
dc.language.iso	en_US	en_US
dc.title	Nanostructure structure effect on transition in pi-cells	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	78	en_US
dc.citation.epage	80	en_US
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000258177700020	-
顯示於類別：	會議論文