40 GHz Phase Shifter based on Semiconductor Laser

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DC Field	Value	Language
dc.contributor.author	Peng, P. C.	en_US
dc.contributor.author	Wu, F. M.	en_US
dc.contributor.author	Lin, C. T.	en_US
dc.contributor.author	Chen, J. H.	en_US
dc.contributor.author	Kao, W. C.	en_US
dc.contributor.author	Shih, P. T.	en_US
dc.contributor.author	Jiang, W. J.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Chi, S.	en_US
dc.date.accessioned	2014-12-08T15:12:18Z	-
dc.date.available	2014-12-08T15:12:18Z	-
dc.date.issued	2008-04-10	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20080457	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9461	-
dc.description.abstract	This investigation experimentally demonstrates a 40 GHz phase shifter based on a semiconductor laser. The phase shift is achieved by adjusting the bias current and wavelength detuning. The device has an optical delay of 23 ps and a phase shift of about 331 degrees.	en_US
dc.language.iso	en_US	en_US
dc.title	40 GHz Phase Shifter based on Semiconductor Laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20080457	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	44	en_US
dc.citation.issue	8	en_US
dc.citation.spage	520	en_US
dc.citation.epage	521	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000255414900011	-
dc.citation.woscount	2	-
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