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dc.contributor.authorPeng, P. C.en_US
dc.contributor.authorWu, F. M.en_US
dc.contributor.authorLin, C. T.en_US
dc.contributor.authorChen, J. H.en_US
dc.contributor.authorKao, W. C.en_US
dc.contributor.authorShih, P. T.en_US
dc.contributor.authorJiang, W. J.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorChi, S.en_US
dc.date.accessioned2014-12-08T15:12:18Z-
dc.date.available2014-12-08T15:12:18Z-
dc.date.issued2008-04-10en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20080457en_US
dc.identifier.urihttp://hdl.handle.net/11536/9461-
dc.description.abstractThis investigation experimentally demonstrates a 40 GHz phase shifter based on a semiconductor laser. The phase shift is achieved by adjusting the bias current and wavelength detuning. The device has an optical delay of 23 ps and a phase shift of about 331 degrees.en_US
dc.language.isoen_USen_US
dc.title40 GHz Phase Shifter based on Semiconductor Laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20080457en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume44en_US
dc.citation.issue8en_US
dc.citation.spage520en_US
dc.citation.epage521en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000255414900011-
dc.citation.woscount2-
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