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dc.contributor.author李威儀en_US
dc.date.accessioned2014-12-13T10:37:32Z-
dc.date.available2014-12-13T10:37:32Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2218-E009-050zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94717-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=461546&docId=84615en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject磊晶成長zh_TW
dc.subject藍光雷射二極體zh_TW
dc.subjectGaNen_US
dc.subjectEpitaxial growthen_US
dc.subjectBlue laser diodeen_US
dc.title氮化鎵族光電材料與元件之研發---子計畫I:氮化物藍光波段元件結構磊晶研究(I)zh_TW
dc.titleEpitaxial Growth of Nitrides for Blue-Emitting Devices (I)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子物理系zh_TW
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