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dc.contributor.author葉清發en_US
dc.date.accessioned2014-12-13T10:38:07Z-
dc.date.available2014-12-13T10:38:07Z-
dc.date.issued1998en_US
dc.identifier.govdocNSC87-2215-E009-048zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95072-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=409164&docId=72450en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject複晶矽zh_TW
dc.subject液相沈積zh_TW
dc.subject離子披覆zh_TW
dc.subject保護層zh_TW
dc.subject薄膜電晶體zh_TW
dc.subjectPolysiliconen_US
dc.subjectLiquid-phase depositionen_US
dc.subjectIon platingen_US
dc.subjectPassivation layeren_US
dc.subjectThin film transistoren_US
dc.title複晶矽薄膜電晶體相關技術之開發---子計畫二:高品質複晶矽薄膜電晶體介電絕緣層之研究(III)zh_TW
dc.titleStudy of High-Quality Dielectrics of Polysilicon Thin Film Transistors (III)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
Appears in Collections:Research Plans