複晶矽薄膜電晶體相關技術之開發---子計畫二：高品質複晶矽薄膜電晶體介電絕緣層之研究(III)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	葉清發	en_US
dc.date.accessioned	2014-12-13T10:38:07Z	-
dc.date.available	2014-12-13T10:38:07Z	-
dc.date.issued	1998	en_US
dc.identifier.govdoc	NSC87-2215-E009-048	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95072	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=409164&docId=72450	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	複晶矽	zh_TW
dc.subject	液相沈積	zh_TW
dc.subject	離子披覆	zh_TW
dc.subject	保護層	zh_TW
dc.subject	薄膜電晶體	zh_TW
dc.subject	Polysilicon	en_US
dc.subject	Liquid-phase deposition	en_US
dc.subject	Ion plating	en_US
dc.subject	Passivation layer	en_US
dc.subject	Thin film transistor	en_US
dc.title	複晶矽薄膜電晶體相關技術之開發---子計畫二：高品質複晶矽薄膜電晶體介電絕緣層之研究(III)	zh_TW
dc.title	Study of High-Quality Dielectrics of Polysilicon Thin Film Transistors (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
顯示於類別：	研究計畫