次微米元件內氧化層缺陷暫態特性量測技術

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:38:07Z	-
dc.date.available	2014-12-13T10:38:07Z	-
dc.date.issued	1998	en_US
dc.identifier.govdoc	NSC87-2215-E009-060	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95073	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=409152&docId=72447	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氧化層缺陷	zh_TW
dc.subject	暫態特性	zh_TW
dc.subject	空間分布	zh_TW
dc.subject	電場效應	zh_TW
dc.subject	Oxide trap	en_US
dc.subject	Transient characteristics	en_US
dc.subject	Spatial distribution	en_US
dc.subject	Field effect	en_US
dc.title	次微米元件內氧化層缺陷暫態特性量測技術	zh_TW
dc.title	Oxide Trap Transient Spectroscopy in a MOSFET	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
顯示於類別：	研究計畫