二六族稀磁性半導體特性及高壓相變與理論物理之探討

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	褚德三	en_US
dc.contributor.author	CHUU DER SAN	en_US
dc.date.accessioned	2014-12-13T10:38:15Z	-
dc.date.available	2014-12-13T10:38:15Z	-
dc.date.issued	1998	en_US
dc.identifier.govdoc	NSC87-2112-M009-009	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95146	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=370365&docId=66538	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	稀磁性半導體	zh_TW
dc.subject	碳微管	zh_TW
dc.subject	量子霍爾效應	zh_TW
dc.subject	薄膜	zh_TW
dc.subject	單晶	zh_TW
dc.subject	Diluted magnetic semiconductor	en_US
dc.subject	Carbon nanotube	en_US
dc.subject	Quantum hall effect	en_US
dc.subject	Thin film	en_US
dc.subject	Single crystal	en_US
dc.title	二六族稀磁性半導體特性及高壓相變與理論物理之探討	zh_TW
dc.title	Investigation of High Pressure Phase Transition of Diluted Magnetic II-VI Semiconductors and Studies of Theoretical Physics	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
顯示於類別：	研究計畫