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dc.contributor.authorLin, J. C.en_US
dc.contributor.authorSu, Y. K.en_US
dc.contributor.authorChang, S. J.en_US
dc.contributor.authorLan, W. H.en_US
dc.contributor.authorHuang, K. C.en_US
dc.contributor.authorChen, W. R.en_US
dc.contributor.authorLan, C. H.en_US
dc.contributor.authorHuang, C. C.en_US
dc.contributor.authorLin, W. J.en_US
dc.contributor.authorCheng, Y. C.en_US
dc.date.accessioned2014-12-08T15:12:23Z-
dc.date.available2014-12-08T15:12:23Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn1751-8768en_US
dc.identifier.urihttp://dx.doi.org/10.1049/iet-opt:20070057en_US
dc.identifier.urihttp://hdl.handle.net/11536/9514-
dc.description.abstractNitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photocletector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photocletector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.en_US
dc.language.isoen_USen_US
dc.titleGaN p-i-n photodetectors with an LT-GaN interlayeren_US
dc.typeArticleen_US
dc.identifier.doi10.1049/iet-opt:20070057en_US
dc.identifier.journalIET OPTOELECTRONICSen_US
dc.citation.volume2en_US
dc.citation.issue2en_US
dc.citation.spage59en_US
dc.citation.epage62en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000255415600001-
dc.citation.woscount6-
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