The electrical characteristics of high-kappa Pr2O3 thin-film transistors with nitrogen-implanted polysilicon films

Abstract

This paper demonstrates the poly-Si TFTs with high-kappa Pr2O3 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into alpha-Si film before solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of Pr2O3 poly-Si TFT implanted with the nitrogen dosage of 5x10(12) cm(-2) could be greatly improved. In addition, a good hot-harrier immunity of high-kappa Pr2O3 poly-Si TFT could be also obtained.