完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, T. H. | en_US |
dc.contributor.author | Hsieh, C. C. | en_US |
dc.contributor.author | Shih, H. C. | en_US |
dc.contributor.author | Luo, C. W. | en_US |
dc.contributor.author | Uen, T. M. | en_US |
dc.contributor.author | Wu, K. H. | en_US |
dc.contributor.author | Juang, J. Y. | en_US |
dc.contributor.author | Lin, J. -Y. | en_US |
dc.contributor.author | Hsu, C. -H. | en_US |
dc.contributor.author | Liu, S. J. | en_US |
dc.date.accessioned | 2014-12-08T15:12:25Z | - |
dc.date.available | 2014-12-08T15:12:25Z | - |
dc.date.issued | 2008-03-31 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2904649 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9547 | - |
dc.description.abstract | Orthorhombic HoMnO(3) films with well-aligned crystallographic orientations were deposited on LaAlO(3)(110) single crystal substrates by using pulsed laser deposition. The nearly perfect b-axis-oriented films provide the opportunity of investigating the orientation-dependent physical property of this material. The temperature dependent magnetization evidently displays an antiferromagnetic ordering near 42 K, irrespective to the direction of applied field. Furthermore, the theoretically expected lock-in transition was clearly observed at around 30 K when field was applied along the c axis and was undetectable along the a and b axes. The 30 K transition was suppressed to 26 K when the applied field increased from 100 to 500 Oe. (C) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Anomalous magnetic ordering in b-axis-oriented orthorhombic HoMnO(3) thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2904649 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 92 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000254669900049 | - |
dc.citation.woscount | 18 | - |
顯示於類別: | 期刊論文 |