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dc.contributor.authorHuang, J. Y.en_US
dc.contributor.authorHuang, S. C.en_US
dc.contributor.authorChang, H. L.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.date.accessioned2014-12-08T15:12:29Z-
dc.date.available2014-12-08T15:12:29Z-
dc.date.issued2008-03-03en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.16.003002en_US
dc.identifier.urihttp://hdl.handle.net/11536/9587-
dc.description.abstractA high-performance A1GaInAs quantum-well saturable absorber is developed for passively Q-switched Er-Yb double-clad fiber lasers at 1560 nm. With an incident pump power of 13.5 W, an average output power of 1.26 W with a pulse repetition rate of 12 kHz is obtained. The maximum peak power is greater than 500 W. (C) 2008 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titlePassive Q switching of Er-Yb fiber laser with semiconductor saturable absorberen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.16.003002en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume16en_US
dc.citation.issue5en_US
dc.citation.spage3002en_US
dc.citation.epage3007en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000254121300018-
dc.citation.woscount27-
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