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dc.contributor.authorLo, Kuang-Yaoen_US
dc.contributor.authorLo, Shih-Chiehen_US
dc.contributor.authorYu, Chang-Fengen_US
dc.contributor.authorTite, Teddyen_US
dc.contributor.authorHuang, Jung-Y.en_US
dc.contributor.authorHuang, Yi-Jenen_US
dc.contributor.authorChang, Ren-Chuanen_US
dc.contributor.authorChu, Sheng-Yuanen_US
dc.date.accessioned2014-12-08T15:12:29Z-
dc.date.available2014-12-08T15:12:29Z-
dc.date.issued2008-03-03en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2891334en_US
dc.identifier.urihttp://hdl.handle.net/11536/9591-
dc.description.abstractThe symmetry of the twin boundaries of ZnO epitaxial film was detected with reflective second harmonic generation (RSHG). The twin boundaries exhibit mirror symmetry with a polar configuration across the boundary plane and yield a nonvanishing polar contribution to RSHG. The nonvanishing second-order susceptibility supports the notion that the measured RSHG originates from the planar defect, which depends on the residual stress in the thin film. We analyzed our RSHG result by correlating the macroscopic data from optic probe with the microscopic data from tunneling electron microscope.en_US
dc.language.isoen_USen_US
dc.titleOptical second harmonic generation from the twin boundary of ZnO thin films grown on siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2891334en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000253761500034-
dc.citation.woscount7-
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