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dc.contributor.author陳振芳en_US
dc.contributor.authorCHEN JENN-FANGen_US
dc.date.accessioned2014-12-13T10:38:59Z-
dc.date.available2014-12-13T10:38:59Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2112-M009-048zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95935-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=223289&docId=40031en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title三五族氮化合物半導體薄膜之物理特性研究---子計畫三:三五族氮化合物半導體薄膜之物理特性之研究(I)zh_TW
dc.titleStudy of Electrical Properties of III-V Nitride Semiconductors(I)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
Appears in Collections:Research Plans