次微米元件區離子佈植與缺陷退火的研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	朱志勳	en_US
dc.date.accessioned	2014-12-13T10:39:16Z	-
dc.date.available	2014-12-13T10:39:16Z	-
dc.date.issued	1995	en_US
dc.identifier.govdoc	NSC84-2215-E009-081	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96258	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=161214&docId=26834	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	次微米元件區離子佈植與缺陷退火的研究	zh_TW
dc.title	The Study of Ion Implantation and Defects Annealing in Submicron Device Active Areas	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學	zh_TW
Appears in Collections:	Research Plans