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dc.contributor.authorChau, Yuan-Fongen_US
dc.contributor.authorTsai, Din Pingen_US
dc.contributor.authorShen, Lin-Fangen_US
dc.contributor.authorYang, Tzong-Jeren_US
dc.contributor.authorSun, Yuh-Sienen_US
dc.date.accessioned2014-12-08T15:12:32Z-
dc.date.available2014-12-08T15:12:32Z-
dc.date.issued2008-03-01en_US
dc.identifier.issn0030-4018en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.optcom.2007.10.072en_US
dc.identifier.urihttp://hdl.handle.net/11536/9625-
dc.description.abstractThe plasmon and distribution effects of collective localized surface plasmons between incident light and active layer of PtOx-type super resolution near-field structure (super-RENS) have been studied using finite-difference time-domain method. Four types of distribution of Pt nanoparticles, i.e., type A, B, C, and D in active layer are investigated. We find that type C and D in active layer can provide higher field intensity in a wider range of particle size when the particle sizes are varied, and the out-going filed emerging from the active layer exhibit smaller spot size than those of type A and B. Type B, C and D also provide the additional path longer than that of type A, and excite more evanescent field which located in the far edge of the bubble from the optical axis of the incident beam. Results show that the type C structure is the best choice in the view point of designing the PtOx-type super-RENS. This study provides new information to design a super-RENS with superior resolution as well as other applications in nano photonic devices. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleThe plasmon and distribution effects between incident light and active layer in PtOx-type super-resolution near-field structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.optcom.2007.10.072en_US
dc.identifier.journalOPTICS COMMUNICATIONSen_US
dc.citation.volume281en_US
dc.citation.issue5en_US
dc.citation.spage1293en_US
dc.citation.epage1299en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000252762900056-
dc.citation.woscount1-
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