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dc.contributor.authorLim, Cheng Guanen_US
dc.date.accessioned2014-12-08T15:12:33Z-
dc.date.available2014-12-08T15:12:33Z-
dc.date.issued2008-03-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2007.915275en_US
dc.identifier.urihttp://hdl.handle.net/11536/9628-
dc.description.abstractBy incorporating a lumped-element impedance-matching network on the laser diode carrier/submount, the signal injection efficiency of electro-absorption modulator integrated lasers is significantly improved through the reduction of input return loss. Over a frequency range spanning from 5.8 to 10 GHz, an improvement of approximately 12% to 37% in signal injection efficiency is observed. To avoid increasing the component-count, a unique implementation of the lumped element impedance matching network is proposed.en_US
dc.language.isoen_USen_US
dc.subjectelectro-absorption modulator integrated lasersen_US
dc.subjectimpedance matchingen_US
dc.subjectinput return lossen_US
dc.titleElectro-absorption modulator integrated lasers with enhanced signal injection efficiencyen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2007.915275en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume26en_US
dc.citation.issue5-8en_US
dc.citation.spage685en_US
dc.citation.epage691en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000255006000026-
dc.citation.woscount5-
Appears in Collections:Articles


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