新結構的複晶矽薄膜電晶體的設計與低溫製作(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	葉清發	en_US
dc.date.accessioned	2014-12-13T10:39:21Z	-
dc.date.available	2014-12-13T10:39:21Z	-
dc.date.issued	1995	en_US
dc.identifier.govdoc	NSC84-2215-E009-041	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96390	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=172140&docId=29235	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新結構的複晶矽薄膜電晶體的設計與低溫製作(I)	zh_TW
dc.title	The Fabrication & Investigation of Low-Temperature Processed Poly-Si TFT with Dual-Buffer Drain and Self-Induced Drain Structure (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程研究所	zh_TW
Appears in Collections:	Research Plans