磷化銦鎵 / 砷化鎵高崩潰電壓金屬-半導體場效電晶體之研製

Full metadata record

DC Field	Value	Language
dc.contributor.author	呂學士	en_US
dc.contributor.author	SHEY-SHILU	en_US
dc.date.accessioned	2014-12-13T10:40:13Z	-
dc.date.available	2014-12-13T10:40:13Z	-
dc.date.issued	1994	en_US
dc.identifier.govdoc	NSC83-0404-E002-015	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/97294	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=109729&docId=17459	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	磷化銦鎵 / 砷化鎵高崩潰電壓金屬-半導體場效電晶體之研製	zh_TW
dc.title	The Study of GaInP/GaAs High Break Voltage MESFET	en_US
dc.type	Plan	en_US
dc.contributor.department	國立台灣大學電機工程學系	zh_TW
Appears in Collections:	Research Plans