完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.contributor.author | Lai, Yi-Shao | en_US |
dc.date.accessioned | 2014-12-08T15:12:40Z | - |
dc.date.available | 2014-12-08T15:12:40Z | - |
dc.date.issued | 2008-02-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2836939 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9737 | - |
dc.description.abstract | This article reports a nanomechanical response study of the contact-induced deformation behavior in Al(0.16)Ga(0.84)N thin film by means of a combination of nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. Al(0.16)Ga(0.84)N thin film is deposited by using the metal-organic chemical vapor deposition method. Hardness and Young's modulus of the Al(0.16)Ga(0.84)N films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements mode. The obtained values of the hardness and Young's modulus are 19.76 +/- 0.15 and 310.63 +/- 9.41 GPa, respectively. The XTEM images taken in the vicinity just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of the load-displacement curve suggests that no pressure-induced phase transition was involved. (c) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Cross-sectional transmission electron microscopy observations of structural damage in Al(0.16)Ga(0.84)N thin film under contact loading | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2836939 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 103 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000253238100016 | - |
dc.citation.woscount | 19 | - |
顯示於類別: | 期刊論文 |