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dc.contributor.authorMeng, Chin-Chunen_US
dc.contributor.authorWu, Tzung-Hanen_US
dc.date.accessioned2014-12-08T15:12:40Z-
dc.date.available2014-12-08T15:12:40Z-
dc.date.issued2008-02-01en_US
dc.identifier.issn0192-6225en_US
dc.identifier.urihttp://hdl.handle.net/11536/9740-
dc.description.abstractSeveral high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFIC) implemented by our research group are reviewed in this article. These demonstrated RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual-feedback wideband amplifiers, a broadband Gilbert down-conversion micromixer, Gilbert down-conversion mixers with polyphase filters for image rejection, a dual-conversion Weaver receiver, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs.en_US
dc.language.isoen_USen_US
dc.titleA 5 GHz RFIC single chip solution in GaInP/GaAs HBT technologyen_US
dc.typeArticleen_US
dc.identifier.journalMICROWAVE JOURNALen_US
dc.citation.volume51en_US
dc.citation.issue2en_US
dc.citation.spage132en_US
dc.citation.epage+en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000253843500018-
dc.citation.woscount3-
Appears in Collections:Articles