| 標題: | 鋁膜中摻雜 Si 及Cu對其陽極氧化薄膜生成之影響及其在IC上之應用 Effect of Si and Cu Doping on the Anodic Oxide Formation of Al Thin Films and Their IC Applications |
| 作者: | 張秉衡 國立交通大學材料科學工程研究所 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83-0404-E009-098 |
| URI: | http://hdl.handle.net/11536/97457 https://www.grb.gov.tw/search/planDetail?id=110644&docId=17682 |
| 顯示於類別： | 研究計畫 |
- 鋁膜中摻雜 Si及Cu對其陽極氧化薄膜生成之影響及其在IC上之應用 / 張秉衡
- 陽極氧化鋁薄膜之特性研究 / 邱瑞隆;Chiu ,Re-Long;張秉衡;Peeng-Heng Chang
- AL2O3 FILMS FORMED BY ANODIC-OXIDATION OF AL-1 WEIGHT PERCENT SI-0.5 WEIGHT PERCENT CU FILMS / CHIU, RL;CHANG, PH;TUNG, CH
- The effect of preheating treatment on anodic Al2O3 formed on sputtered Al thin films / Chiu, RL;Chang, PH;Tung, CH
- THE EFFECT OF ANODIZING TEMPERATURE ON ANODIC OXIDE FORMED ON PURE AL THIN-FILMS / CHIU, RL;CHANG, PH;TUNG, CH
- Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C / Luo, JS;Lin, WT;Chang, CY;Shih, PS
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