標題: | Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks |
作者: | Chang, H. J. Chen, T. T. Huang, L. L. Chen, Y. F. Tsai, J. Y. Wang, T. C. Kuo, H. C. 光電工程學系 Department of Photonics |
公開日期: | 21-一月-2008 |
摘要: | Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiNx nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelectric effect arising from the screening of the internal electric field due to spatial separation of photoexcited electrons and holes. Our results point out a convenient way for the fine tuning of physical properties in nitride-based semiconductor nanostructures, which is very important for high quality optoelectronic devices. (c) 2006 Optical Society of America. |
URI: | http://dx.doi.org/10.1364/OE.16.000920 http://hdl.handle.net/11536/9754 |
ISSN: | 1094-4087 |
DOI: | 10.1364/OE.16.000920 |
期刊: | OPTICS EXPRESS |
Volume: | 16 |
Issue: | 2 |
起始頁: | 920 |
結束頁: | 926 |
顯示於類別: | 期刊論文 |