標題: Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks
作者: Chang, H. J.
Chen, T. T.
Huang, L. L.
Chen, Y. F.
Tsai, J. Y.
Wang, T. C.
Kuo, H. C.
光電工程學系
Department of Photonics
公開日期: 21-一月-2008
摘要: Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiNx nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelectric effect arising from the screening of the internal electric field due to spatial separation of photoexcited electrons and holes. Our results point out a convenient way for the fine tuning of physical properties in nitride-based semiconductor nanostructures, which is very important for high quality optoelectronic devices. (c) 2006 Optical Society of America.
URI: http://dx.doi.org/10.1364/OE.16.000920
http://hdl.handle.net/11536/9754
ISSN: 1094-4087
DOI: 10.1364/OE.16.000920
期刊: OPTICS EXPRESS
Volume: 16
Issue: 2
起始頁: 920
結束頁: 926
顯示於類別:期刊論文


文件中的檔案:

  1. 000252479700043.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。