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dc.contributor.authorLin, Z. C.en_US
dc.contributor.authorLin, S. D.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2014-12-08T15:12:46Z-
dc.date.available2014-12-08T15:12:46Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2007.07.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/9840-
dc.description.abstractStacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (M BE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMBEen_US
dc.subjectInPen_US
dc.subjectquantum-wireen_US
dc.titleOrdering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physe.2007.07.005en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume40en_US
dc.citation.issue3en_US
dc.citation.spage512en_US
dc.citation.epage515en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000253032800015-
dc.citation.woscount5-
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