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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorLiou, Sz-Chianen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorJan, Chueh-Kueien_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:12:49Z-
dc.date.available2014-12-08T15:12:49Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2819255en_US
dc.identifier.urihttp://hdl.handle.net/11536/9865-
dc.description.abstractMaterial and electrical characteristics of (Pb,Sr)TiO3 (PSrT) films irradiated by various laser pulses and laser fluences are investigated in this work. Enhanced crystallinity can be obtained after excimer laser annealing (ELA). However, grain growth induced by ELA is nonuniform, and the effect is limited to the upper region of the films. As the number of laser pulses increases to 120, the film shows stronger diffraction intensities and increased oxygen content, resulting in a distinct capacitance versus electric field hysteresis loop and a larger dielectric constant than the nonirradiated one. The leakage current is found to be associated with the interface quality. The conduction mechanism of nonirradiated and irradiated PSrT films is mainly governed by Schottky emission at low electric fields, whereas the Poole-Frenkel emission occurs for films irradiated with more than 120 laser pulses or laser fluences larger than 90.5 mJ/cm(2) at high electric fields. (C) 2008 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleStructural and electrical investigation of laser annealed (Pb,Sr)TiO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.2819255en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume26en_US
dc.citation.issue1en_US
dc.citation.spage41en_US
dc.citation.epage46en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000253399000013-
dc.citation.woscount2-
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