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dc.contributor.author顏順通en_US
dc.contributor.authorYEN SHUN-TUNGen_US
dc.date.accessioned2014-12-13T10:41:53Z-
dc.date.available2014-12-13T10:41:53Z-
dc.date.issued2012en_US
dc.identifier.govdocNSC101-2221-E009-055-MY2zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/98835-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2648072&docId=399812en_US
dc.description.abstract本計畫將開發具高效率與高同調性的兆赫輻射源並研究該輻射背後的物理機制。此輻射源為高偏壓下操作的高遷移率電晶體及異質接面雙載子電晶體。為獲得高效率的兆赫輻射,我們將利用高偏壓加速電晶體內的電子,使其有效激發可以輻射兆赫波的聲子。為探討輻射機制,我們將量測電晶體的(1)輻射效率與(2)輻射偏振度受元件結構、操作溫度及電子濃度的影響。為提昇輻射的同調性,我們將使用有共振腔效果的二維金屬孔洞陣列作為異質接面雙載子電晶體的電極。zh_TW
dc.description.abstractThe project will (1) develop terahertz radiation sources with high efficiency and high coherence and (2) investigate the underlying physics of the radiation. The sources are high-voltage biased high-electron- mobility transistors and heterojunction bipolar transistors. To obtain efficient radiation, we are to apply high-voltage bias to the transistors to accelerate electrons for efficient excitation of phonons capable of emitting terahertz radiation. To explore the radiation mechanism, we are to measure the dependences of (1) the radiation efficiency and (2) the degree of polarization of the radiation on the structural parameters, the operating temperature, and the electron concentration of the transistors. To enhance the coherence, we are to integrate a two-dimensional metallic hole array, which can act as an electrode and provide a cavity effect, with a heterojunction bipolar transistor.en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject室溫zh_TW
dc.subject兆赫輻射源zh_TW
dc.subject聲子zh_TW
dc.subject高遷移率電晶體zh_TW
dc.subject異質接面雙載子電晶體zh_TW
dc.subject二維金屬孔洞陣列zh_TW
dc.subject共振腔zh_TW
dc.subjectroom temperatureen_US
dc.subjectterahertz radiation sourcesen_US
dc.subjectphononsen_US
dc.subjecthigh electron mobility transistoren_US
dc.subjecttwo-dimensional metallic hole arrayen_US
dc.subjectcavityen_US
dc.title以電晶體為基礎之高效率與高同調性兆赫輻射源zh_TW
dc.titleHigh-Efficiency and High-Coherence Terahertz Radiation Sources Based on Transistorsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
Appears in Collections:Research Plans