标题: | 藉着晶圆接合从蓝宝石基板上剥离氮化镓发光二极体 Lift-Off Gan Led Epitaxy Layer from Sapphire Substrate by Wafer Bonding Processes |
作者: | 吴耀铨 WU YEWCHUNG SERMON 国立交通大学材料科学与工程学系(所) |
关键字: | 剥離氮化镓磊晶层;晶圆接合;湿式蚀刻藍宝石;湿式蚀刻氮化镓;lift-off GaN film;wafer bonding processes;wet etched sapphire;wet etched GaN |
公开日期: | 2012 |
摘要: | 本计画是利用(1)在氮化镓磊晶层与藍宝石基板间的产生凹凸狀的空隙结构。 加上 (2)晶圆接合后降温时,造成在氮化镓与藍宝石介面间的热应力集中而剥離。主要有2 种方法:(1)湿式蚀刻藍宝石方式 (1)湿式蚀刻氮化镓方式。磊晶后,再藉着晶圆接合从 藍宝石基板上剥離氮化镓发光二极体。 This project is about lift-off GaN film using 2 steps: (1) reduced the interface between GaN and Sapphire substrate, and (2)separate them using wafer bonding processes. This is because the stress concentration on the interface. Two methods will be used (1) wet etched sapphire and (2) wet etched GaN. |
官方说明文件#: | NSC101-2221-E009-052-MY3 |
URI: | http://hdl.handle.net/11536/98849 https://www.grb.gov.tw/search/planDetail?id=2598197&docId=393631 |
显示于类别: | Research Plans |